COT(GDSII to CHIP) TURNKEY SERVICE

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Customer Request Form SOC / ASIC Request Form Gate Array Request Form MPW Request Form Layout Service Request Form COT Request Form

ASIC Product Turnkey Service ASIC Product Turnkey Service SOC/ASIC Turnkey Capability SOC/ASIC Turnkey Equipment Turnkey Background Reliability Test Failure Analysis Package Offerings

Success Cases 90nm 0.13um 0.18um 0.25um 0.35um 0.5um 0.6um

SiP Turnkey Design Service SyStem-in-Package (SiP) SiP Design Platform Service SiP Punch Type Offering SiP versus SOC SiP Package SiP Design Information SiP Package Size SiP Punch Type Offering SiP Sawing Type Offering SiP Developing Time SiP Developing Flow SiP Developing Design Fee Electrical Simulation Thermal Simulation MCM QFP Stacked Die SiP Side by Side SiP Stacked(1) BGA SiP Stacked(2) BGA Package Stacking Package SiP RF Package

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PGC can offer COT (GDSII to CHIP) turnkey service with TSMC semiconductor technology for worldwide customer. The supported technology includes followings:

Technology Category:

CMOS Logic Processes: 0.13um/0.18um/0.25um/0.35um/0.5um/0.6um
CMOS Mixed-Signal/RF Processes: 0.13um/0.18um/0.25um/0.35um/0.5um/0.6um
CMOS Emb-Flash Processes: 0.25um/0.35um/0.5um

Detail Processes Portfolio:

CMOS Logic Processes

Technology	0.13um CMOS	0.13um CMOS	0.13um CMOS	0.13um CMOS
Process	Logic General Purpose 1P6M/7M/8M	Logic Low Power 1P6M/7M/8M	Logic Low Voltage 1P6M/7M/8M	Logic General Purpose 1P6M/7M/8M
Material	FSG Cu	FSG Cu	FSG Cu	FSG Cu
Voltage	1.2&3.3V	1.5&3.3V	1.0&3.3V	1.2&2.5V

Technology	0.13um CMOS	0.13um CMOS	0.13um CMOS	0.13um CMOS
Process	Logic Low Voltage 1P6M/7M/8M	Logic General Purpose 1P6M/7M/8M	Logic Low Voltage 1P6M/7M/8M	Logic General Purpose 1P6M/7M/8M
Material	FSG Cu	Low-K Cu	Low-K Cu	Low-K Cu
Voltage	1.0&2.5V	1.2&3.3V	1.0&3.3V	1.2&2.5V

Technology	0.13um CMOS	0.18um CMOS	0.18um CMOS	0.18um CMOS
Process	Logic Low Voltage 1P6M/7M/8M	Logic General Purpose 1P4M/5M/6M	Logic Low Power 1P4M/5M/6M	Logic Low Voltage 1P4M/5M/6M
Material	Low-K Cu	FSG Al Salicide	FSG Al Salicide	FSG Al Salicide
Voltage	1.0&2.5V	1.8&3.3V	1.8&3.3V	1.5&3.3V

Technology	0.25um CMOS	0.25um CMOS	0.25um CMOS	0.35um CMOS
Process	Logic 1P4M/5M	Logic 1P4M/5M	Logic 1P4M/5M	Logic 1P3M/4M
Material	Salicide	Salicide	Salicide	Polycide
Voltage	2.5V	2.5&3.3V	2.5&5V	3.3V

Technology	0.35um CMOS	0.35um CMOS	0.35um CMOS	0.5um CMOS
Process	Logic 1P3M/4M	Logic 1P3M/4M	Logic 1P3M/4M	Logic 1P2M/3M
Material	Polycide	Silicide	Silicide	Polycide
Voltage	3.3&5V	3.3V	3.3&5V	5V

Technology	0.5um CMOS	0.6um CMOS
Process	Logic 1P2M/3M	Logic 1P2M/3M
Material	Polycide	Polycide
Voltage	3.3V	5V

 

CMOS Mixed-Signal/RF Processes

Technology	0.13um CMOS	0.13um CMOS	0.18um CMOS	0.18um CMOS
Process	Mixed-Signal MS General Purpose MiM1P4M/5M/6M	Mixed-Signal MS General Purpose MiM1P4M/5M/6M	Mixed-Signal MS General Purpose MiM1P4M/5M/6M	Mixed-Signal RF General Purpose MiM1P4M/5M/6M
Material	FSG Cu Salicide	FSG Cu Salicide	Al Salicide	Al Salicide
Voltage	1.2&2.5V	1.2&3.3V	2.5&3.3V	2.5&3.3V

Technology	0.25um CMOS	0.25um CMOS	0.25um CMOS	0.25um CMOS
Process	Mixed-Signal MS General Purpose MiM1P4M/5M	Mixed-Signal RF General Purpose MiM1P4M/5M	Mixed-Signal MS General Purpose MiM1P4M/5M	Mixed-Signal RF General Purpose MiM1P4M/5M
Material	Al Salicide	Al Salicide	Al Salicide	Al Salicide
Voltage	2.5&3.3V	2.5&3.3V	2.5&5V	2.5&5V

Technology	0.35um CMOS	0.35um CMOS	0.5um CMOS	0.6um CMOS
Process	Mixed-Signal/RF 2P3M/4M	Mixed-Signal/RF 2P3M/4M	Mixed-Signal/RF 2P2M/3M	Mixed-Signal/RF 2P2M/3M
Material	Polycide	Polycide	Polycide	Polycide
Voltage	3.33V	3.3&5V	5V	5V

 

CMOS Emb-Flash Processes

Technology	0.25um CMOS	0.25um CMOS	0.35um CMOS	0.35um CMOS
Process	Embedded Memory Flash Logic based General Purpose 2P4M/5M	Embedded Memory Flash Mixed signal based General Purpose MiM 2P4M/5M	Embedded Memory Flash Logic based General Purpose 2P3M/4M	Embedded Memory Flash Mixed signal based General Purpose 2P3M/4M
Material	Salicide	Salicide	Silicide	Silicide
Voltage	2.5&3.3V	2.5&3.3V	3.3V	3.3V

Technology	0.5um CMOS	0.5um CMOS
Process	Embedded Memory Flash Logic based General Purpose 2P3M	Embedded Memory Flash Mixed signal based General Purpose 3P3M
Material	Polycide	Polycide
Voltage	3.3&5V	3.3&5V

 

Note: The above processes are just for reference. If you intend to go COT Turnkey Service Model, please contact PGC sales for detail.

SOC / ASIC Turnkey Design Service SOC Turnkey Design Service Fault Simulation / Coverage Service Flow SOC RTL Hand-off Flow(SOC RTL-QA) Memory BIST Service Flow SOC RTL-QA Analysis Flow Overview SOC Low Power Service Flow SOC Design Platform Service (RTLQA, STA, DFT and Low Power) FIB Overview SOC Design Platform Service Flow (Between PGC and Customer) FIB Flow Pre-Layout Sign-off Flow ASIC Turnkey Design Service Memo Post-Layout Sign-off Flow PGC ASIC Turnkey Design Service Process Schedule SOC DFT and ATPG Service Flow Mass Production Control Flow Boundary Scan Service Flow Package Offerings

Gate Array Turnkey Design Service 0.35um HDA10000 0.5um HDA9000 0.6um HDA8000 0.6um TGT550 G/A Design Sign-off Flow FPGA->Gate Array conversion FPGA Converting and Verifying Flow