Vendor P/N

Process

Description

Area

(Mil^2)

IP Status

Datasheet

HD-SP-SRAM

0.18um 1P4M

Logic Salicide

High Density

Single Port Sync. SRAM

By Case

Memory

Compiler

 

Sync-TP-SRAM

0.18um 1P4M

Logic Salicide

Two Port Sync. SRAM

By Case

Memory

Compiler

 

Sync-DP-SRAM

0.18um 1P4M

Logic Salicide

Dual Port Sync. SRAM

By Case

Memory

Compiler

Contact Us

HS-Sync-SROM

0.18um 1P4M

Logic Salicide

High Speed

Single Port Sync. ROM

By Case

Memory

Compiler

 

 
Vendor P/N

Process

Description

Area

(Mil^2)

IP Status

Datasheet

SSC-T25

TSMC

0.25um generic

Synchronous Single-Port

SRAM compiler

Cell size:

7.56 mil^2

Memory

Compiler

Contact Us

HD-Single Port-SSRAM

0.25um 1P4M

Logic Salicide

High Density

Single Port Sync. SRAM

By Case

Memory

Compiler

Contact Us

HD-Dual Port-SSRAM

0.25um 1P4M

Logic Salicide

High Density

Dual Port Sync. SRAM

By Case

Memory

Compiler

Contact Us

HD-Single Port-ASRAM

0.25um 1P4M

Logic Salicide

High Density

Single Port Async. SRAM

By Case

Memory

Compiler

Contact Us

HD-Dual Port-ASRAM

0.25um 1P4M

Logic Salicide

High Density

Dual Port Async. SRAM

By Case

Memory

Compiler

Contact Us

RF-Sync-TP-SRAM

0.25um 1P4M

Logic Salicide

Register File

Two Port Sync. SRAM

By Case

Memory

Compiler

 

RF-Sync-SP-SRAM

0.25um 1P4M

Logic Salicide

Register File

Single Port Sync. SRAM

By Case

Memory

Compiler

 

 
Vendor P/N

Process

Description

Area

(Mil^2)

IP Status

Datasheet

AROM32M

0.35um Flat-Cell

32M bit Mask ROM (4M*8/2M*16)

 

Production

Contact Us

 

Status

Description

Pre-Silicon

Design architecture completed based on simulation results.

Verification

Verified functionality in TSMC silicon.

Production

Production proven in at least one TSMC customer design.

License Type

Description

TSMC Specialized License Method.

Time (days)

Description

X ( Y )

X means PGC’s effort and Y means IP Vendor’s effort.

HIGH DENSITY MEMORY
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