ASIC Leader Delivers Complex Chip Design which Incorporates
SUNNYVALE, Calif. and TAIPEI, Taiwan-Apr.
10, 2007-MoSys, Inc. (Nasdaq:MOSY), the leading provider of
high-density system-on-chip (SoC) embedded memory intellectual
property (IP) solutions, and Progate Group Corporation, Taiwan's
first ASIC turnkey design service provider, today announced that
their latest joint customer will begin production of a new-generation
CMOS chip that will enhance the real-time conference calling capabilities
of mobile phones.
Together, the companies have satisfied the customer's need to incorporate a large amount of embedded memory on a competitively priced consumer-oriented SoC. Progate was selected to lay out and produce the SoC based on customer specifications. To meet the performance, leakage and area requirements, Progate chose a high-density 1T-SRAM solution from MoSys.
"Progate was an obvious choice to develop
this SoC due to our track record and our certification under the
TSMC Design Center Alliance program," said Jack Kao, director
of research and development at Progate. "MoSys' 1-T SRAM
offers the ideal embedded memory solution in the integration of
the SoC. Its compact size and high performance enabled us to reduce
the die size while maintaining a high yield."
"MoSys and Progate worked very efficiently
together to ensure that the product was delivered to the customer
on time and within budget," said Chet Silvestri, president
and CEO of MoSys. "By working with experienced design service
providers like Progate, we can deliver the advantages of our 1T-SRAM
technology to a large number of customers."
About Progate Group Corporation
Progate Group Corporation was founded in 1991. As the first
turnkey service provider of ASIC designs in Taiwan, PGC always
exerts its endeavor to provide the focused and quality services
to achieve Time-to-Value. PGC has taped-out successfully more
than 900 projects and shipped billions of chips worldwide. In
this era of SoC, PGC provides a complete and stable chain of services,
including the wafer fabrication, die package and IP integration.
As part of this chain of services, PGC has the business relationship
with TSMC for more than ten years as a certified member of its
Design Center Alliance Program. More information about PGC is
available at http://www.pgc.com.tw.
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys' patented 1T-SRAMR and 1T-FLASHR technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com.
1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.